• DocumentCode
    3552136
  • Title

    Cost effective manufacturing of high quality (100) InP round substrates

  • Author

    Shahid, M.A. ; Simchock, F.

  • Author_Institution
    AT&T Bell Lab., Princeton, NJ, USA
  • fYear
    1991
  • fDate
    8-11 Apr 1991
  • Firstpage
    319
  • Lastpage
    322
  • Abstract
    A cost-effective process for growing ⟨111⟩ InP single crystals to produce high quality round (100) InP substrates is described. The process of growing elliptical InP crystals uses approximately 40% less material for a given length of a crystal, compared with the process using a circular cross section. The etch pit density measured over the whole wafer is <50/cm2
  • Keywords
    III-V semiconductors; crystal growth from melt; indium compounds; semiconductor technology; substrates; ⟨111⟩ single crystals; (100) round substrates; cost-effective process; elliptical InP crystals; etch pit density; manufacturing; semiconductors; Costs; Indium phosphide; Manufacturing; Production; Shape;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1991., Third International Conference.
  • Conference_Location
    Cardiff
  • Print_ISBN
    0-87942-626-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1991.147362
  • Filename
    147362
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3552136