Title :
Electrical and optical properties of Ni3+ in p-type InP
Author :
Korona, K. ; Bremond, G. ; Hennel, A.M.
Author_Institution :
Inst. of Exp. Phys., Warsaw Univ., Poland
Abstract :
Deep level transient spectroscopy (DLTS), deep level optical spectroscopy (DLOS), and optical absorption (OA) measurements were performed on Ni diffused p-type InP to find the position of the single acceptor level of Ni in InP and to characterize optically the Ni3+ state. DLTS enabled the identification of Ni acceptor levels in InP and the determination of its activation energy and its hole capture cross-section. Using DLOS an optical photoionization cross-section of the Ni3+ to Ni2+ transition was found
Keywords :
III-V semiconductors; deep level transient spectroscopy; electrical conductivity of crystalline semiconductors and insulators; impurity and defect absorption spectra of inorganic solids; indium compounds; nickel; DLOS; InP:Ni; Ni2+ state; Ni3+ state; activation energy; deep level optical spectroscopy; hole capture cross-section; optical absorption; optical photoionization cross-section; optical properties; p-type; single acceptor level; Absorption; Gold; Indium phosphide; Ionization; Nickel; Ohmic contacts; Optical materials; Semiconductor materials; Spectroscopy; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147363
