DocumentCode
3552198
Title
Silicon monolithic random pulse generator
Author
Wang, L. ; Robertson, H. ; Schuegraf, K.K.
Author_Institution
Westinghouse Electric Corporation, Newbury Park, Calif.
Volume
10
fYear
1964
fDate
1964
Firstpage
32
Lastpage
32
Abstract
A silicon single-chip random-locked pulse generator has been fabricated by using component redundancy and two layer interconnect techniques. The system consists of 17 DTL Nand gates with a total of 153 components. The circuit has two input and two output terminals. Its function will be briefly described. Processing yield and single layer interconnections are the basic restrictions for the fabrication of complex monolithic subsystems. The yield problem has been overcome by using a component redundancy technique. The interconnection problem has been solved by using two layer interconnections separated by an insulating layer. Combination of these two techniques was utilized for manufacturing of the device.
Keywords
Etching; Fabrication; Frequency; Insulation; Integrated circuit interconnections; Manufacturing; Molecular electronics; Pulse generation; Silicon compounds; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1964 International
Type
conf
DOI
10.1109/IEDM.1964.187455
Filename
1473852
Link To Document