InP/GaAsSb DHBTs With Simultaneous $f_{\\rm T}/f_{\\rm MAX}=428/621~{\\rm GHz}$

Author

Lovblom, Rickard ; Fluckiger, Ralf ; Alexandrova, Maria ; Ostinelli, Olivier ; Bolognesi, C.R.

Author_Institution

Dept. of Informationstechnologie und Elektrotechnik, ETH Zurich, Zurich, Switzerland

Volume

34

Issue

8

fYear

2013

fDate

Aug. 2013

Firstpage

984

Lastpage

986

Abstract

Type-II InP/GaAsSb double heterojunction bipolar transistors (DHBTs) with an f_MAX of 621 GHz and a simultaneous f_T of 428 GHz are demonstrated. A DC peak current gain β = 19 and a common-emitter breakdown voltage BV_CEO=5 V are measured for 0.2 × 4.4-μm² emitter devices featuring a 20-nm-thick graded GaAsSb base with a sheet resistance of 1077 Ω/□ and a 125-nm-thick more heavily doped InP collector enabling a higher Kirk current. The present transistors are the first InP/GaAsSb DHBTs with an f_MAX in excess of 600 GHz.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave transistors; submillimetre wave transistors; DC peak current gain; InP-GaAsSb; common-emitter breakdown voltage; doped InP collector; double heterojunction bipolar transistors; graded GaAsSb base; sheet resistance; size 125 nm; size 20 nm; type-II InP-GaAsSb DHBT; voltage 5 V; Current measurement; Double heterojunction bipolar transistors; Gain; Indium phosphide; Junctions; Kirk field collapse effect; Double heterojunction bipolar transistors (DHBTs); InP/GaAsSb; maximum oscillation frequency $(f_{rm MAX})$; millimeter-wave transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2269711

Filename

6558475