DocumentCode :
35522
Title :
InP/GaAsSb DHBTs With Simultaneous 
Author :
Lovblom, Rickard ; Fluckiger, Ralf ; Alexandrova, Maria ; Ostinelli, Olivier ; Bolognesi, C.R.
Author_Institution :
Dept. of Informationstechnologie und Elektrotechnik, ETH Zurich, Zurich, Switzerland
Volume :
34
Issue :
8
fYear :
2013
fDate :
Aug. 2013
Firstpage :
984
Lastpage :
986
Abstract :
Type-II InP/GaAsSb double heterojunction bipolar transistors (DHBTs) with an fMAX of 621 GHz and a simultaneous fT of 428 GHz are demonstrated. A DC peak current gain β = 19 and a common-emitter breakdown voltage BVCEO=5 V are measured for 0.2 × 4.4-μm2 emitter devices featuring a 20-nm-thick graded GaAsSb base with a sheet resistance of 1077 Ω/□ and a 125-nm-thick more heavily doped InP collector enabling a higher Kirk current. The present transistors are the first InP/GaAsSb DHBTs with an fMAX in excess of 600 GHz.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave transistors; submillimetre wave transistors; DC peak current gain; InP-GaAsSb; common-emitter breakdown voltage; doped InP collector; double heterojunction bipolar transistors; graded GaAsSb base; sheet resistance; size 125 nm; size 20 nm; type-II InP-GaAsSb DHBT; voltage 5 V; Current measurement; Double heterojunction bipolar transistors; Gain; Indium phosphide; Junctions; Kirk field collapse effect; Double heterojunction bipolar transistors (DHBTs); InP/GaAsSb; maximum oscillation frequency $(f_{rm MAX})$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2269711
Filename :
6558475
Link To Document :
