• DocumentCode
    3552200
  • Title

    PbSe diode laser

  • Author

    Butler, J.F. ; Calawa, A.R. ; Rediker, R.H. ; Rediker, R.

  • Author_Institution
    Massachusetts Institute of Technology, Lexington, Massachusetts
  • Volume
    10
  • fYear
    1964
  • fDate
    1964
  • Firstpage
    36
  • Lastpage
    36
  • Abstract
    Laser action at 8.5 µ has been observed from PbSe diodes. The diodes were prepared from p-type PbSe Which had been annealed under closely controlled conditions of temperature and Se vapor pressure to obtain a hole concentration of 4.7 \\times 10^{17} cm-3. The n-p junction was formed by diffusing excess Pb into a cleaved
  • Keywords
    Annealing; Current measurement; Diode lasers; Gas lasers; Laboratories; Laser modes; Optical pulses; Power lasers; Stimulated emission; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1964 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1964.187457
  • Filename
    1473854
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3552200