The design of 2-3 Gc NPN transistors for silicon microcircuits

Silicon transistors, particularly double-diffused NPN, have not previously demonstrated the high frequency performance predicted by theoretical analysis. This lack of correlation between theoretical and experimental performance has limited the high frequency use of NPN silicon transistors generally, and the attainment of high speed silicon microcircuits specifically. Experimental results have demonstrated the various limiting factors of NPN silicon transistors and the methods used to overcome the limitations in fabricating very high speed silicon microcircuits.