Title :
Characteristics and abruptness of InGaAs/InP quantum well and optoelectronic applications of quantum wells grown by GSMBE
Author :
Iwamura, Hidetoshi ; Uenohara, Hiroyuki ; Kagawa, Toshiaki ; Naganuma, Mitsuru
Author_Institution :
NTT Opto-Electron. Lab., Kanagawa, Japan
Abstract :
High quality quantum well structures of InGaAs/InGaAsP and InAlAs/InGaAsP were grown by gas source molecular beam epitaxy (GSMBE). Low-temperature photoluminescence (PL) measurements, transverse electromagnetic (TEM) observation of the cleaved edge, and high-energy electron diffraction (RHEED) patterns obtained during growth of the interface are used to investigate the characteristics of the heterointerface. Multiple quantum well separate confinement heterostructure (MQW-SCH) laser diodes, voltage-controlled bistable laser diodes, and InGaAsP/InAlAs superlattice avalanche photodiodes are discussed as device applications
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor junction lasers; semiconductor quantum wells; semiconductor superlattices; GSMBE; InAlAs-InGaAsP; InGaAs-InGaAsP; InGaAs-InP; MQW-SCH laser diodes; RHEED; high-energy electron diffraction; optoelectronic applications; photoluminescence; quantum wells; semiconductors; superlattice avalanche photodiodes; voltage-controlled bistable laser diodes; Diode lasers; Electromagnetic diffraction; Electromagnetic measurements; Electrons; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Photoluminescence; Potential well;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147389
