Pt-based gate enhancement-mode InAlAs/InGaAs HEMTs for large-scale integration

Author

Harada, Naoki ; Kuroda, Shigeru ; Katakami, Teruhiko ; Hikosaka, Kohki ; Mimura, Takashi ; Abe, Masayuki

Author_Institution

Fujitsu Lab. Ltd., Atsugi, Japan

fYear

1991

fDate

8-11 Apr 1991

Firstpage

377

Lastpage

380

Abstract

The barrier heights of several n-InAlAs/metal Schottky contacts are discussed. A thin-Pt/Ti/Pt Au multilayer gate is proposed for InP-based InAlAs/InGaAs HEMTs. Its Schottky barrier height was measured as 0.83 eV, and it shows good threshold voltage stability. Performance measurements of an enhancement-mode HEMT fabricated using a 1.1-μm-long multilayer gate indicate a threshold voltage of 0.05 V and a transconductance of 540 mS/mm

Keywords

III-V semiconductors; Schottky effect; Schottky gate field effect transistors; Schottky-barrier diodes; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; large scale integration; semiconductor-metal boundaries; 0.05 V; 0.83 eV; 1.1 micron; Au-Pt-Ti-Pt-InAlAs; HEMTs; InAlAs-InGaAs; Schottky barrier height; Schottky contacts; barrier heights; enhancement-mode; large-scale integration; multilayer gate; semiconductors; threshold voltage; threshold voltage stability; transconductance; Gold; HEMTs; Indium compounds; Indium gallium arsenide; Large-scale systems; MODFETs; Nonhomogeneous media; Schottky barriers; Stability; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147394

Filename

147394