Title :
RF and noise characterization of a monolithically integrated receiver on InP
Author :
Feiste, U. ; Kaiser, R. ; Mekonnen, G.G. ; Schramm, C. ; Trommer, D. ; Unterbörsch, G.
Author_Institution :
Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany
Abstract :
A comprehensive characterization of an optoelectronic integrated circuit (OEIC) receiver that uses an optical waveguide is given. Bias dependent signal and noise measurements show that the gain-bandwidth product increases from 1.4 GHz at zero bias operation to 2.7 GHz at the optimum bias voltages. The receiver input noise is dominated by the JFET channel noise. Using an equivalent circuit model for the receiver, agreement between the calculated and the measured data was found. From the measured input noise, an optical sensitivity of -29 dBm was evaluated at a bit rate of 576 Mb/s (BER=10-9)
Keywords :
III-V semiconductors; electron device noise; indium compounds; integrated optoelectronics; junction gate field effect transistors; optical communication equipment; photodiodes; receivers; semiconductor device models; 576 Mbit/s; InP substrates; JFET channel noise; OEIC; RF characterization; bias dependence; bias operation; bit rate; equivalent circuit model; gain-bandwidth product; monolithically integrated receiver; noise characterization; noise measurement; optical receivers; optical sensitivity; optical waveguide; optoelectronic integrated circuit; receiver input noise; semiconductors; signal measurement; Integrated circuit noise; Integrated optics; Noise measurement; Optical noise; Optical receivers; Optical sensors; Optical waveguides; Optoelectronic devices; Photonic integrated circuits; Radio frequency;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147400
