RF and noise characterization of a monolithically integrated receiver on InP

Author

Feiste, U. ; Kaiser, R. ; Mekonnen, G.G. ; Schramm, C. ; Trommer, D. ; Unterbörsch, G.

Author_Institution

Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany

fYear

1991

fDate

8-11 Apr 1991

Firstpage

411

Lastpage

414

Abstract

A comprehensive characterization of an optoelectronic integrated circuit (OEIC) receiver that uses an optical waveguide is given. Bias dependent signal and noise measurements show that the gain-bandwidth product increases from 1.4 GHz at zero bias operation to 2.7 GHz at the optimum bias voltages. The receiver input noise is dominated by the JFET channel noise. Using an equivalent circuit model for the receiver, agreement between the calculated and the measured data was found. From the measured input noise, an optical sensitivity of -29 dBm was evaluated at a bit rate of 576 Mb/s (BER=10^-9)

Keywords

III-V semiconductors; electron device noise; indium compounds; integrated optoelectronics; junction gate field effect transistors; optical communication equipment; photodiodes; receivers; semiconductor device models; 576 Mbit/s; InP substrates; JFET channel noise; OEIC; RF characterization; bias dependence; bias operation; bit rate; equivalent circuit model; gain-bandwidth product; monolithically integrated receiver; noise characterization; noise measurement; optical receivers; optical sensitivity; optical waveguide; optoelectronic integrated circuit; receiver input noise; semiconductors; signal measurement; Integrated circuit noise; Integrated optics; Noise measurement; Optical noise; Optical receivers; Optical sensors; Optical waveguides; Optoelectronic devices; Photonic integrated circuits; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147400

Filename

147400