Title :
Monolithic integrated laser DHBT OEICs for optical fibre communication
Author :
Kuhn, E. ; Hache, C. ; Kaiser, D. ; Laube, G. ; Speier, P. ; Tegude, F.J. ; Wunstel, K.
Author_Institution :
SEL-ALCATEL Res. Centre, Stuttgart, Germany
Abstract :
The monolithic integration of a double heterostructure bipolar transistor (DHBT) with a 1.3-μm semi-insulating buried heterostructure (SI-BH) laser realized with InP/InGaAs(P) is discussed. The integration is based on a SI-BH laser with laterally grown SI-InP current blocking layers and an invertible DHBT with underlying SI-InP. For the growth process of the SI-InP as well as the DHBT-layers, a selective, planarizing metalorganic vapor-phase epitaxy (MOVPE) process is used. For nonoptimized devices, large signal operation up to 600 Mb/s and 5 mW optical power per facet has been demonstrated. The DC and RF characteristics of the transmitter are presented
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical communication equipment; semiconductor junction lasers; vapour phase epitaxial growth; 1.3 micron; 5 mW; 600 Mbit/s; DC characteristics; DHBT; InP-InGaAsP; OEICs; RF characteristics; buried heterostructure; current blocking layers; double heterostructure bipolar transistor; integrated laser; large signal operation; monolithic integration; optical fibre communication; optical power; optical transmitter; planarizing metalorganic vapor-phase epitaxy; semiconductors; Bipolar transistors; Epitaxial growth; Epitaxial layers; Fiber lasers; Indium phosphide; Monolithic integrated circuits; Optical devices; Optical fibers; Optical transmitters; Radio frequency;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147402
