• DocumentCode
    3552271
  • Title

    Enhanced Schottky barrier InP MESFETs

  • Author

    Abid, Z. ; Gopinath, A. ; Williamson, F. ; Nathan, M.

  • Author_Institution
    Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
  • fYear
    1991
  • fDate
    8-11 Apr 1991
  • Firstpage
    431
  • Lastpage
    433
  • Abstract
    The design, fabrication, and characterization of a stable InP MESFET with a delta-doped p+ layer are outlined. The 1 μm gate length MESFET has a transconductance of 110 mS/mm; the InP surface was not passivated or treated prior to the gate metal deposition. Measured fmax and fT are 11.6 GHz and 5.4 GHz respectively
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; indium compounds; solid-state microwave devices; 1 micron; 11.6 GHz; 5.4 GHz; InP; MESFETs; Schottky barrier enhancement; characterization; delta-doped p+ layer; design; fabrication; gate length; semiconductors; stable InP MESFET; transconductance; FETs; Fabrication; Gallium arsenide; Gold; Indium phosphide; MESFETs; Metallization; Schottky barriers; Surface treatment; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1991., Third International Conference.
  • Conference_Location
    Cardiff
  • Print_ISBN
    0-87942-626-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1991.147405
  • Filename
    147405
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3552271