Title :
Influence of the well composition and thickness in the GaInP/InP/GaInAs/InP structure for HEMT
Author :
Loualiche, S. ; Le Corre, A. ; Salaun, S. ; Durel, S. ; Lecrosnier, D. ; Guillemot, C. ; Vaudry, C. ; Henry, L.
Abstract :
Photoluminescence, Hall effect, and I-V characteristics of heterostructure InP/GaInAs/InP grown by gas source molecular beam epitaxy (MBE) are presented. The structure is chosen as an alternative to AlInAs/GaInAs/AlInAs to avoid the problems related to the presence of aluminum in HEMT structures. An extremely high indium concentration is used in the well to improve its performance. The InAs well degrades above 10 Å thickness. It is shown that the best experimental results are obtained with a 60 Å GaInAs well (82% InAs) with 2% lattice mismatch
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; 60 A; GSMBE; GaInP-InP-GaInAs-InP; HEMT; Hall effect; I-V characteristics; MBE; experimental results; gas source molecular beam epitaxy; lattice mismatch; semiconductors; Conducting materials; Effective mass; HEMTs; Hall effect; Indium phosphide; Lattices; Molecular beam epitaxial growth; Oxidation; Photoluminescence; Schottky barriers;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147406
