16-element grown-junction InGaAs/InP PIN photodetector arrays on 2" diameter InP substrates

Author

Spear, D.A.H. ; Lee, W.S. ; Smith, A.D. ; Dawe, P.J.G. ; Geear, M.C. ; Bland, S.W.

Author_Institution

STC Technol. Ltd., Harlow, UK

fYear

1991

fDate

8-11 Apr 1991

Firstpage

444

Lastpage

446

Abstract

The fabrication and performance characteristics of a linear 16-element InGaAs/InP PIN photodetector array suitable for 1.3-1.6 μm wavelength applications are described. The detector design relies on a grown pn junction for the diode and avoids producing exposed InGaAs junctions, which are difficult to passivate. The array fabrication procedure is fully compatible with future monolithic integration with InP-based electronics. A satisfactory yield of good arrays has been obtained. Optical crosstalk measurements were performed at DC and RF with the array mounted in a grating demultiplexer

Keywords

III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; photodetectors; semiconductor epitaxial layers; 1.3 to 1.6 micron; 2 in; DC measurements; InGaAs-InP; InP substrates; PIN photodetector arrays; RF measurements; detector design; diameter; fabrication; grating demultiplexer; grown-junction; linear arrays; optical crosstalk; semiconductors; wavelength; yield; Detectors; Diodes; Indium gallium arsenide; Indium phosphide; Monolithic integrated circuits; Optical arrays; Optical crosstalk; Optical device fabrication; Performance evaluation; Photodetectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147408

Filename

147408