DocumentCode
355228
Title
Optical modulators in the 500-600-nm visible wavelength regime using an Al/sub x/Ga/sub 1-x/As/Al/sub y/Ga/sub 1-y/As MOCVD-grown AFPM
Author
Clark, Andrew ; Egan, Renate J. ; Jagadish, C.
Author_Institution
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear
1996
fDate
2-7 June 1996
Firstpage
488
Lastpage
489
Abstract
Summary form only given. We have demonstrated the growth of good quality, high reflectivity mirrors at wavelengths as low as 550 nm and electroabsorption between 580 and 540 nm in AlGaAs/AlAs MQWs. We present details on these and results on the characterization of the modulator grown by integrating the mirror and the MQW structures in a Fabry-Perot cavity.
Keywords
CVD coatings; III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; mirrors; reflectivity; semiconductor quantum wells; 500 to 600 nm; AlGaAs-AlGaAs; AlGaAs/AlAs MQW; Fabry-Perot cavity; MOCVD-grown AFPM; electroabsorption; high reflectivity mirror; optical modulator; visible wavelength; Bandwidth; Mirrors; Optical interconnections; Optical modulation; Optical transmitters; Photodetectors; Quantum well devices; Reflectivity; Resonance; Wavelength division multiplexing;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location
Anaheim, CA, USA
Print_ISBN
1-55752-443-2
Type
conf
Filename
864965
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