DocumentCode
3552288
Title
AlInAs/GaInAs SAGM-APD
Author
Bellego, Y.L. ; Praseuth, J.P. ; Scavennec, A.
Author_Institution
CNET, Bagneux, France
fYear
1991
fDate
8-11 Apr 1991
Firstpage
452
Lastpage
455
Abstract
The fabrication and performance of a graded avalanche photodiode structure with a separate GaInAs photo-absorption layer and AlInAs avalanche region to achieve a pure electron injection are discussed. The quality of AlInAs as the avalanche region has been evaluated by measuring responsivity, response time, and excess noise factor. The 3 dB bandwidth and the excess noise factor correspond to β/α~0.3 in pure AlInAs, decreasing to about 0.1 for an AlInAs/GaInAs MQW structure
Keywords
III-V semiconductors; aluminium compounds; avalanche photodiodes; electron device noise; gallium arsenide; indium compounds; optical communication equipment; semiconductor quantum wells; MQW structure; SAGM-APD; avalanche region; bandwidth; excess noise factor; fabrication; graded avalanche photodiode structure; performance; photo-absorption layer; pure electron injection; response time; responsivity; semiconductors; Absorption; Avalanche photodiodes; Bit rate; Dark current; Frequency; Indium phosphide; Ionization; Optical fiber communication; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location
Cardiff
Print_ISBN
0-87942-626-8
Type
conf
DOI
10.1109/ICIPRM.1991.147410
Filename
147410
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