Sub-nanosecond monolithic integrated circuits

Average propagation delay times of less than one nanosecond have been achieved in silicon monolithic integrated circuits through utilization of very high performance npn silicon transistors in Emitter Coupled and TTL circuits. In particular those factors of integrated circuit design and fabrication which are important in obtaining sub-nanosecond performance in monolithic silicon microcircuits will be covered as well as the relative performance of those circuits in discrete and microcircuit form. Silicon transistor high frequency performance has been extended well beyond the levels previously described. Transistors have been fabricated with measured fTin the order of 5 Gc. The design features and techniques for producing 4-5 GcfT, rb¹<10 Ω, npn silicon transistors will be given.