Reliability studies of wafer-bonded InGaAs P-I-N photodetectors on GaAs substrates

Summary form only given. We present the first reliability studies of InGaAs P-I-N photodiodes wafer-bonded to GaAs substrates. The P-I-N photodiodes used for our reliability studies have shown record low dark currents (<100 pA for about 40% of the devices) and a high responsivity of 1 A/W at 1.55-/spl mu/m wavelength. The detailed characteristics of the P-I-N detectors wafer-bonded to both GaAs and Si have been published elsewhere. The focus of this paper will be on the degradation of the devices under high temperature operation (60/spl deg/C) and thermal cycling (23 to 95/spl deg/C).