DocumentCode
3552341
Title
"Solder ball" formation in silicon alloy transistors
Author
Hakim, E.B. ; McSherry, L.K. ; Reich, B.
Author_Institution
U.S. Army Electronics Command, Fort Monmouth, N. J.
fYear
1965
fDate
20-22 Oct. 1965
Firstpage
36
Lastpage
36
Abstract
Summary for only given, as follows. This report discusses the investigation and solution of the so-called "solder ball," problem which has plagued the transistor industry for years. Upon investigating silicon alloy transistors which use tin for electrodes, it was discovered that "solder balls" (which can cause internal short-circuiting of the device) are not necessarily associated with manufacturing procedures as previously believed, but are produced by the devices themselves because of the material used in construction. Electrical stresses or high temperatures produce balls in units which initially were free of any foreign matter. This is due to the low melting temperature tin alloy used in the transistor\´s (or other semiconductors) construction. Thus, devices may have balls when put in use and later cause equipment failure. The devices appear good under all measurements. However, when the device is in use, a mechanical shock may shake a ball loose, shorting the transistor and making the circuit inoperable.
Keywords
Building materials; Construction industry; Electrodes; Equipment failure; Manufacturing industries; Semiconductor materials; Silicon alloys; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1965 International
Conference_Location
Washington, DC, USA
Type
conf
DOI
10.1109/IEDM.1965.187568
Filename
1474149
Link To Document