Characterization of InP/InGaAs/InGaAsP using atmospheric and low pressure MOVPE

Author

Moerman, I. ; Coudenys, G. ; Demeester, P. ; Crawley, J.

Author_Institution

Lab. for Electromagn. & Acoust., Gent Univ., Belgium

fYear

1991

fDate

8-11 Apr 1991

Firstpage

472

Lastpage

475

Abstract

Growth results and characterization of undoped and doped InP, InGaAs, and InGaAsP grown using both low pressure and atmospheric pressure metalorganic vapor-phase epitaxy (MOVPE) are presented. The optimization of the growth parameters for undoped InP and InGaAs is described. Special attention has been paid to obtaining a good morphology. The H₂S and DEZ doping of InP, InGaAs, and 1.3-μm and 1.55-μm quaternaries and the dependence of S and Zn doping on pressure and substrate orientation are discussed

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor doping; semiconductor growth; sulphur; vapour phase epitaxial growth; zinc; InGaAs-InGaAsP; InGaAs:S; InGaAs:Zn; InGaAsP:S; InGaAsP:Zn; InP-InGaAs; InP:S; InP:Zn; semiconductors; substrate orientation; uniformity; Atmospheric waves; Doping; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Inductors; Photoluminescence; Photonic integrated circuits; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147415

Filename

147415