MOS resistor - A monolithic approach to high value resistance

The basic MOS structure can be utilized for designing resistors with resistivities in the range of 7 - 25 Kohm/square. The gate induced surface inversion layer is used for the resistor body, while the source and drain regions will be the end terminals. Device characteristics will depend on the biasing conditions. Various modes of operations are studied. Typical modes of operations are (a) constant source to bulk bias and (b) constant drain to bulk bias. Analytical expressions are generated to describe the current-voltage characteristics of these conditions. The analysis is extended to include more general situations of device operation.