Title :
The growth of high quality InP/InGaAs/InGaAsP interfaces by CBE for SCH multi-quantum well lasers
Author :
Sherwin, M.E. ; Nichols, D.T. ; Munns, G.O. ; Bhattacharya, P.K. ; Haddad, G.I.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
The growth of bulk InGaAsP and heterointerfaces of InP/InGaAs and InGaAsP/InGaAs by chemical beam epitaxy for use in multiple quantum well separate confinement heterostructure (MQW-SCH) lasers is discussed. InGaAsP has been successfully grown for λ=1.1, 1.2, and 1.4 μm, and a strong dependence on substrate temperature has been observed for the In and Ga incorporation rates. InP/InGaAs and InGaAsP/InGaAs quantum wells have been grown to determine the optimum gas switching sequence that minimizes the measured photoluminescence FWHM. Lattice matched MQW-SCH lasers grown using different interface switching sequences are described. The best laser is shown to have a threshold current density of 854 A/cm2 for an 800 μm×90 μm broad area device
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; 1.1 to 1.4 micron; 800 micron; 90 micron; CBE; Ga incorporation rates; InGaAs-InGaAsP; InP-InGaAs; MQW-SCH; broad area device; chemical beam epitaxy; gas switching sequence; heterointerfaces; multi-quantum well lasers; multiple quantum well; photoluminescence; semiconductors; separate confinement heterostructure; substrate temperature; threshold current density; Chemical lasers; Epitaxial growth; Gas lasers; Indium gallium arsenide; Indium phosphide; Laser beams; Molecular beam epitaxial growth; Potential well; Quantum well devices; Quantum well lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147416
