DocumentCode :
3552371
Title :
A survey of second breakdown
Author :
Schafft, H.A. ; French, J.C.
Author_Institution :
National Bureau of Standards, Washington, D. C.
Volume :
11
fYear :
1965
fDate :
1965
Firstpage :
46
Lastpage :
46
Abstract :
The existence of a "new high current mode of transistor operation", now generally known as second breakdown, was first reported by Thornton and Simmons in 1958 and was used to explain the mysterious failures that were observed to occur under certain operating conditions. Since then, with the production of higher power and higher frequency transistors, the problems resulting from the existence of second breakdown have proliferated. Interest in the phenomenon has grown concurrently and many papers about second breakdown can be found in the literature. These papers cover a range of interest that extends from theoretical studies of the basic mechanisms involved to interpretations of specifications for transistor operation free of second breakdown. A complete understanding of second breakdown has not yet been achieved and several concepts of second breakdown prevail. The purpose of this paper is to review the work that has been reported in order to present a coherent and comprehensive picture of the present status of second breakdown.
Keywords :
Breakdown voltage; Charge carriers; Couplings; Electric breakdown; Frequency; Lattices; NIST; Production; Temperature dependence; Thermal stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1965 International
Type :
conf
DOI :
10.1109/IEDM.1965.187595
Filename :
1474176
Link To Document :
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