MBE growth and electrical behavior of single and double Si δ-doped InGaAs-layers

Author

Passenberg, W. ; Bach, H.-G. ; Böttcher, J.

Author_Institution

Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany

fYear

1991

fDate

8-11 Apr 1991

Firstpage

484

Lastpage

487

Abstract

The molecular beam epitaxial growth of Si δ-doped donor planes within InGaAs layers is described. The results of Hall and C -V characterization measurements of single and double δ-doped InGaAs channel layers are presented. It is shown that high sheet carrier concentrations approaching 3.8×10¹³ cm ^-2 can be achieved. Improved carrier transport in double δ-doped channels for FET applications is proposed and experimentally confirmed by decreased sheet resistance values obtained from double δ-doped structures

Keywords

Hall effect; III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor doping; semiconductor growth; silicon; δ-doped InGaAs channel layers; C-V characterization; HEMT; InGaAs:Si; MBE growth; carrier transport; double δ-doped channels; electrical behavior; molecular beam epitaxial growth; semiconductors; sheet carrier concentrations; sheet resistance; single δ-doped channels; Atomic layer deposition; Electron mobility; FETs; Frequency; HEMTs; Impurities; Indium gallium arsenide; MODFETs; Particle scattering; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147418

Filename

147418