DocumentCode
3552386
Title
Current-controlled liquid phase epitaxy of InAsP on InP substrates
Author
Inubushi, Kozo ; Sakai, Shiro ; Hyakudai, Toshihisa ; Shintani, Yoshihiro
Author_Institution
Tokushima Univ., Japan
fYear
1991
fDate
8-11 Apr 1991
Firstpage
488
Lastpage
491
Abstract
The effects of the current flow from the substrate to the melt in conventional liquid-phase-epitaxial (LPE) growth of InAsP on (100) InP substrate are investigated. It is shown that, using this technique, the surface is drastically improved for the As solid composition larger than 0.1, the growth rate is increased, and arsenic solid composition at the surface is slightly decreased
Keywords
III-V semiconductors; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; substrates; (100) InP substrate; As solid composition; InAsP-InP; InP substrates; LPE; current controlled epitaxy; current flow effects; growth rate; liquid phase electroepitaxy; liquid phase epitaxy; semiconductors; surface improvement; Boats; Electrons; Epitaxial growth; Furnaces; Indium phosphide; Lattices; Probes; Solids; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location
Cardiff
Print_ISBN
0-87942-626-8
Type
conf
DOI
10.1109/ICIPRM.1991.147419
Filename
147419
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