DocumentCode :
3552388
Title :
Calculations of cut-off frequency, breakdown voltage and capacitance for diffused junctions in thin epitaxial layers
Author :
Lee, T.P.
Author_Institution :
Bell Telephone Laboratories, Laureldale, Pa.
Volume :
11
fYear :
1965
fDate :
1965
Firstpage :
53
Lastpage :
54
Abstract :
Recent developments in high quality silicon varactors for low-noise parametric amplifiers and high-efficiency harmonic generators necessitate the use of epitaxial silicon layers that are thinner than 10 microns, with resistivity less than 1 Ω-cm. This paper extends Breitschwerdt´s recent calculations to such thin epitaxial layers and also includes the calculation of series resistance and capacitance per unit area in a range useful for microwave diode design.
Keywords :
Capacitance; Conductivity; Cutoff frequency; Diodes; Electrical resistance measurement; Epitaxial layers; Gallium arsenide; Silicon; Telephony; Varactors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1965 International
Type :
conf
DOI :
10.1109/IEDM.1965.187610
Filename :
1474191
Link To Document :
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