Title :
Calculations of cut-off frequency, breakdown voltage and capacitance for diffused junctions in thin epitaxial layers
Author_Institution :
Bell Telephone Laboratories, Laureldale, Pa.
Abstract :
Recent developments in high quality silicon varactors for low-noise parametric amplifiers and high-efficiency harmonic generators necessitate the use of epitaxial silicon layers that are thinner than 10 microns, with resistivity less than 1 Ω-cm. This paper extends Breitschwerdt´s recent calculations to such thin epitaxial layers and also includes the calculation of series resistance and capacitance per unit area in a range useful for microwave diode design.
Keywords :
Capacitance; Conductivity; Cutoff frequency; Diodes; Electrical resistance measurement; Epitaxial layers; Gallium arsenide; Silicon; Telephony; Varactors;
Conference_Titel :
Electron Devices Meeting, 1965 International
DOI :
10.1109/IEDM.1965.187610