Title :
Sodium distribution in oxide by radiochemical analysis and its effect on silicon surface potential
Author :
Yon, E. ; Ko, W.H. ; Kuper, A.E.
Author_Institution :
Case Institute of Technology, Cleveland, Ohio.
Abstract :
Radioactive Na24distribution has been measured and correlated with MOS electrical data in over 20 samples of 6000 Å of SiO2grown by conventional wet oxidation of 10 ohm-cm phosphorus doped silicon. Neutron activation by a high flux of thermal neutrons at 50°C maximum showed that total Na was less than 1017cm-3in oxide grown in a conventional bubbled-oxygen all-quartz system. Edges were removed and sectioning done by etching. Planarity of sectioning was verified by uniformity of interference colors. Gamma-ray spectrometry and both radiotracer Na24and neutron activation were used. Sections as thin as 250 Å could be counted.
Keywords :
Electric variables measurement; Etching; Interference; Neutrons; Oxidation; Pollution measurement; Silicon; Snow; Temperature; Voltage;
Conference_Titel :
Electron Devices Meeting, 1965 International
DOI :
10.1109/IEDM.1965.187629