• DocumentCode
    3552414
  • Title

    High resistivity layers in InP obtained by Co or Fe ion implantation and LPE regrowth

  • Author

    Vidimari, Fabio ; Pellegrino, Sergio ; Caldironi, Manuela ; Paola, Angela Di ; Chen, Ruchang

  • Author_Institution
    Telettra SpA, Vimercate, Italy
  • fYear
    1991
  • fDate
    8-11 Apr 1991
  • Firstpage
    500
  • Lastpage
    503
  • Abstract
    The possibility of obtaining semiinsulating buried layers in InP by Co or Fe ion implantation and subsequent epitaxial regrowth is discussed. Electrical characteristics measurements of Fe and Co implanted InP indicate resistivities in excess of 107 Ω-cm critical voltages of 2.5 V, and current densities as low as 20 mA/cm2 at critical voltage
  • Keywords
    III-V semiconductors; cobalt; indium compounds; ion implantation; iron; liquid phase epitaxial growth; semiconductor epitaxial layers; 107 ohmcm; 2.5 V; InP:Co; InP:Fe; characterisation; critical voltages; current densities; epitaxial regrowth; ion implantation; resistivities; semiconductors; semiinsulating InP; semiinsulating buried layers; Conductivity; Current density; Current measurement; Density measurement; Electric variables; Electric variables measurement; Indium phosphide; Ion implantation; Iron; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1991., Third International Conference.
  • Conference_Location
    Cardiff
  • Print_ISBN
    0-87942-626-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1991.147422
  • Filename
    147422
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3552414