Title :
High precision characterization in InxGa1-xAs on InP
Author :
Estrera, J.P. ; Duncan, W.M. ; Kao, Y.C. ; Liu, H.Y.
Author_Institution :
Texas Univ., Dallas, Richardson, TX, USA
Abstract :
Results of Fourier transform photoluminescence (FTPL), X-ray diffraction (XRD), micro-Raman spectroscopy, and photoreflectance (PR) nondestructive characterization measurements of InxGa1-x As grown by molecular beam epitaxy (MBE) on semi-insulating InP:Fe substates are presented. FTPL identified recombination processes at low and room temperature and carrier types of InGaAs films through correlation of 4.2 K and 293 K PL emissions. XRD measurements determine the extent of film relaxation and the composition. The strained nature of the InGaAs films is suggested by the correlation of low temperature PL bandgap energy and XRD composition. GaAs-like LO and TO modes and an InAs-like LO mode are identified by Raman scattering. Room temperature PR and PL bandgap energies show correlation within experimental error
Keywords :
III-V semiconductors; Raman spectra of inorganic solids; X-ray diffraction examination of materials; gallium arsenide; indium compounds; iron; luminescence of inorganic solids; molecular beam epitaxial growth; photoluminescence; reflectivity; semiconductor epitaxial layers; 293 K; 4.2 K; FTPL; Fourier transform photoluminescence; InxGa1-xAs-InP:Fe; InP:Fe substates; MBE; Raman scattering; X-ray diffraction; XRD; bandgap energies; bandgap energy; micro-Raman spectroscopy; molecular beam epitaxy; nondestructive characterization; photoreflectance; recombination processes; semiconductors; Fourier transforms; Indium gallium arsenide; Molecular beam epitaxial growth; Photoluminescence; Photonic band gap; Raman scattering; Spectroscopy; Temperature; X-ray diffraction; X-ray scattering;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147424
