Title :
Measurement of conduction band discontinuity in pseudomorphic In xGa1-xAs/In0.52Al0.48As heterostructures
Author :
Huang, J.H. ; Lalevic, B. ; Chang, T.Y.
Author_Institution :
Dept. of Electr. Eng., Rutgers State Univ., Piscataway, NJ, USA
Abstract :
The current-voltage-temperature (I-V-T) measurement technique is applied, in conjunction with capacitance-voltage (C-V) measurements, to n+ -InxGa1-xAs/In0.52Al0.48 As/n--In0.53 Ga0.47As semiconductor-insulator-semiconductor (SIS) capacitors. The compositional dependence of the conduction band discontinuity over the range of 0.43 ⩽x⩽0.64 was obtained
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor junctions; semiconductor-insulator-semiconductor structures; CV measurements; InxGa1-xAs-In0.52Al0.48 As; compositional dependence; conduction band discontinuity; current-voltage-temperature measurement; semiconductors; Buffer layers; Capacitance-voltage characteristics; Capacitive sensors; Gallium arsenide; Heterojunctions; Indium phosphide; Ohmic contacts; Optical buffering; Semiconductor diodes; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147425
