DocumentCode
3552420
Title
The growth and characterization of epitaxial single crystal LaF3 on InP (111)
Author
Griffiths, C.L. ; Williams, R.H.
Author_Institution
Dept. of Phys., Univ. of Wales Coll. of Cardiff, UK
fYear
1991
fDate
8-11 Apr 1991
Firstpage
523
Lastpage
526
Abstract
The growth of crack-free single crystal layers of the insulator LaF3 on the (111) face of InP is discussed. It is shown that the interface between the two materials is a reacted one involving the formation of La-P and P-F bonds and the production of either metallic In and La or an alloy of the two. The extent of the reactions is dependent upon the growth temperature. The results of X-ray photoelectron spectroscopy (XPS), low-energy electron diffraction (LEED), and DCXD measurements are presented
Keywords
III-V semiconductors; X-ray diffraction examination of materials; X-ray photoelectron spectra; electron diffraction examination of materials; epitaxial growth; epitaxial layers; indium compounds; lanthanum compounds; low energy electron diffraction; semiconductor-insulator boundaries; DCXD measurements; InP (111); InP substrates; LEED; LaF3-InP; X-ray photoelectron spectroscopy; XPS; characterization; crack-free single crystal layers; double crystal X-ray diffraction; epitaxial single crystal; growth temperature; low-energy electron diffraction; semiconductors; Cleaning; Etching; Indium phosphide; Optical microscopy; Oxidation; Surface reconstruction; Temperature; Tungsten; Vacuum systems; Wounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location
Cardiff
Print_ISBN
0-87942-626-8
Type
conf
DOI
10.1109/ICIPRM.1991.147428
Filename
147428
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