Title :
Schottky contacts to InP, InGaAs and InAlAs
Author :
Wilks, S. ; Jenkins, L. ; Morris, J. ; Clark, S. ; Williams, R.H.
Author_Institution :
Dept. of Phys., Univ. of Wales Coll. of Cardiff, UK
Abstract :
Current-voltage characteristics are presented for Au, In, and Sb contacts on InP, InGaAs, and InAlAs surfaces prepared in various ways. The conditions that have yielded the highest barriers and the reasons behind the large variation observed for different surface treatments are discussed. X-ray photoelectron spectroscopy measurements are presented for InP surfaces. The data indicate the source of the mechanism whereby large barrier heights may be obtained for n-type crystals
Keywords :
III-V semiconductors; Schottky effect; X-ray photoelectron spectra; aluminium compounds; antimony; gallium arsenide; gold; indium; indium compounds; Au-InGaAs; In-InAlAs; InAlAs surface; InGaAs surface; InP surface; Sb-InP; Schottky contacts; X-ray photoelectron spectroscopy; current voltage characteristics; large barrier heights; n-type crystals; semiconductors; surface treatments; Chemicals; Etching; Gold; Indium compounds; Indium gallium arsenide; Indium phosphide; Methanol; Schottky barriers; Schottky diodes; Surface treatment;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147429
