DocumentCode
3552421
Title
Schottky contacts to InP, InGaAs and InAlAs
Author
Wilks, S. ; Jenkins, L. ; Morris, J. ; Clark, S. ; Williams, R.H.
Author_Institution
Dept. of Phys., Univ. of Wales Coll. of Cardiff, UK
fYear
1991
fDate
8-11 Apr 1991
Firstpage
527
Lastpage
530
Abstract
Current-voltage characteristics are presented for Au, In, and Sb contacts on InP, InGaAs, and InAlAs surfaces prepared in various ways. The conditions that have yielded the highest barriers and the reasons behind the large variation observed for different surface treatments are discussed. X-ray photoelectron spectroscopy measurements are presented for InP surfaces. The data indicate the source of the mechanism whereby large barrier heights may be obtained for n-type crystals
Keywords
III-V semiconductors; Schottky effect; X-ray photoelectron spectra; aluminium compounds; antimony; gallium arsenide; gold; indium; indium compounds; Au-InGaAs; In-InAlAs; InAlAs surface; InGaAs surface; InP surface; Sb-InP; Schottky contacts; X-ray photoelectron spectroscopy; current voltage characteristics; large barrier heights; n-type crystals; semiconductors; surface treatments; Chemicals; Etching; Gold; Indium compounds; Indium gallium arsenide; Indium phosphide; Methanol; Schottky barriers; Schottky diodes; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location
Cardiff
Print_ISBN
0-87942-626-8
Type
conf
DOI
10.1109/ICIPRM.1991.147429
Filename
147429
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