Photoreflectance study of plasma etching effect on InP

Author

He, L. ; Shi, Z.Q. ; Anderson, W.A.

Author_Institution

Dept. of Electr. & Comput. Eng., State Univ. of New York, Buffalo, Amherst, NY, USA

fYear

1991

fDate

8-11 Apr 1991

Firstpage

531

Lastpage

534

Abstract

The results of photoreflectance (PR) measurements performed to study the effect of plasma etching on InP are presented. InP samples were etched by CF₄ plasma. Rapid thermal annealing (RTA) was conducted to remove the plasma-induced damage. Significant PR spectra distortions occur on plasma etched samples. Both residual impurity-related signals and plasma-induced damage modulation are found in the PR spectra of n-type doped and undoped InP. The pronounced Franz-Keldysh oscillation (FKO) is observed in p-type doped InP. In undoped InP, the plasma induced damage was totally removed by a 390°C, 20 s RTA treatment

Keywords

III-V semiconductors; annealing; indium compounds; ion beam effects; reflectivity; sputter etching; 20 s; 390 C; FKO; Franz-Keldysh oscillation; InP; PR spectra distortions; RTA; photoreflectance measurements; plasma damage; plasma etched samples; plasma etching effect; plasma-induced damage; semiconductors; tetrafluoromethane plasma; Indium phosphide; Photonic band gap; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements; Plasma properties; Rapid thermal annealing; Sputter etching; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147430

Filename

147430