Title :
Photoreflectance study of plasma etching effect on InP
Author :
He, L. ; Shi, Z.Q. ; Anderson, W.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., State Univ. of New York, Buffalo, Amherst, NY, USA
Abstract :
The results of photoreflectance (PR) measurements performed to study the effect of plasma etching on InP are presented. InP samples were etched by CF4 plasma. Rapid thermal annealing (RTA) was conducted to remove the plasma-induced damage. Significant PR spectra distortions occur on plasma etched samples. Both residual impurity-related signals and plasma-induced damage modulation are found in the PR spectra of n-type doped and undoped InP. The pronounced Franz-Keldysh oscillation (FKO) is observed in p-type doped InP. In undoped InP, the plasma induced damage was totally removed by a 390°C, 20 s RTA treatment
Keywords :
III-V semiconductors; annealing; indium compounds; ion beam effects; reflectivity; sputter etching; 20 s; 390 C; FKO; Franz-Keldysh oscillation; InP; PR spectra distortions; RTA; photoreflectance measurements; plasma damage; plasma etched samples; plasma etching effect; plasma-induced damage; semiconductors; tetrafluoromethane plasma; Indium phosphide; Photonic band gap; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements; Plasma properties; Rapid thermal annealing; Sputter etching; Surface treatment;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147430
