Title :
Nearly ideal Schottky contacts of n-InP
Author :
Shi, Z.Q. ; Anderson, W.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., State Univ. of New York, Buffalo, Amherst, NY, USA
Abstract :
Nearly ideal Schottky contacts were realized on n-InP by oxide-free surface cleaning techniques. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the metal-semiconductor (MS) diodes are presented for the temperature range of 100 to 300 K. The current transport mechanism is found to be dominated by thermionic emission (TE) rather than thermionic field emission (TFE) theory. The ideality factor, n, is nearly constant in the temperature range of 150 to 300 K. The superior behavior of the diodes, such as ideal electrical characteristics, n values of around 1.01, and linear 1/C 2-V plots, is attributed to the preservation of the surface integrity and the reduction of the interface states
Keywords :
III-V semiconductors; Schottky effect; Schottky-barrier diodes; indium compounds; surface treatment; 100 to 300 K; C/V characteristics; I/V characteristics; InP; Schottky contacts; current transport mechanism; ideality factor; interface states; oxide-free surface; semiconductors; surface cleaning techniques; surface integrity; temperature range; thermionic emission transport; Capacitance-voltage characteristics; Electric variables; Etching; Indium phosphide; Metal-insulator structures; Protection; Schottky barriers; Schottky diodes; Surface cleaning; Temperature distribution;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147431
