InP/insulator interface properties: a comparison between UVCVD, DECR PECVD and 13.56 MHz PECVD

Author

Proust, N. ; Petitjean, M. ; Cassette, S. ; Huber, A. ; Grattepain, C. ; Plais, F. ; Agius, B. ; Perrin, J.

Author_Institution

Thomson-CSF, Orsay, France

fYear

1991

fDate

8-11 Apr 1991

Firstpage

543

Lastpage

546

Abstract

SiNH and SiOH have been deposited on InP by ultraviolet chemical vapor deposition (UVCVD), distributed electronic cyclotronic resonance (DECR) plasma-enhanced chemical vapor deposition (PECVD), and pulsed 13.56 MHz PECVD at 250°C. A comparison between deposition techniques is presented in terms of interface composition (XPS), defect creation in InP (ETOCAPS), and secondary ion mass spectrometry (SIMS) profiles on metal-insulator-silicon diodes

Keywords

III-V semiconductors; X-ray photoelectron spectra; chemical vapour deposition; dislocation etching; indium compounds; interface structure; plasma CVD; secondary ion mass spectra; semiconductor-insulator boundaries; silicon compounds; 13.56 MHz; 250 degC; DECR PECVD; ETOCAPS; InP; MIS diodes; SIMS profiles; SiNH-InP; SiOH-InP; UVCVD; XPS; defect creation; distribution electron cyclotron resonance plasma CVD; interface composition; plasma-enhanced chemical vapor deposition; pulsed PECVD; secondary ion mass spectrometry; ultraviolet chemical vapor deposition; Chemicals; Diodes; Electrons; Etching; Frequency; Indium phosphide; Insulation; Mass spectroscopy; Silicon; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147434

Filename

147434