Title :
Low temperature deposition of SiO2 on InP substrates by DECR PECVD
Author :
Plais, F. ; Agius, B. ; Proust, N. ; Cassette, S. ; Ravel, G. ; Puech, M.
Author_Institution :
Inst. Univ. de Technol., Univ. Paris Sud, Orsay, France
Abstract :
The low temperature deposition of SiO2 thin films onto InP substrates is discussed. It is shown that the physical and chemical properties of SiO2 thin films are stable over a three month period. X-ray photoelectron spectroscopy (XPS) analysis of the chemistry of the SiO2-InP interface reveals the presence of an interfacial substrate oxide. The MIS C(V) characteristics exhibit low frequency dispersion and a deep depletion regime, but it is shown that the measurement procedure can significantly affect the fixed charge and interface state density determination
Keywords :
III-V semiconductors; X-ray photoelectron spectra; indium compounds; interface electron states; interface structure; metal-insulator-semiconductor structures; plasma CVD; semiconductor-insulator boundaries; silicon compounds; DECR PECVD; InP substrates; MIS C-V characteristics; SiO2-InP interface chemistry; deep depletion regime; fixed charge; interface state density; interfacial substrate oxide; low frequency dispersion; low temperature deposition; Chemicals; Chemistry; Density measurement; Dispersion; Frequency; Indium phosphide; Spectroscopy; Sputtering; Temperature; Transistors;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147435
