Title :
Improved electronic properties of As-based III-V compound semiconductor surface stabilized with phosphorus
Author :
Gendry, M. ; Krafft, F. ; Krawczyk, S. ; Viktorovitch, P. ; Abraham, P. ; Bekkaoui, A. ; Monteil, Y.
Author_Institution :
Lab. d´´Electron., Autom. et Mesures Electr., CNRS, Ecully, France
Abstract :
A passivation procedure of As-based III-V compound semiconductors (GaAs and In0.53Ga0.47As) based on thermal treatments in a phosphine overpressure is discussed. X-ray photoelectron spectroscopy (XPS) measurements show that the treatment leads to the formation, by an As-P exchange reaction, of a thin phosphide overlayer that prevents the oxidation of the As-based III-V compound surface when the sample is exposed to air. The treatment results in a significant increase of the photoluminescence emitted by the samples
Keywords :
III-V semiconductors; X-ray photoelectron spectra; gallium arsenide; indium compounds; luminescence of inorganic solids; passivation; photoluminescence; surface electron states; As-P exchange reaction; GaAs; In0.53Ga0.47As; PH3 overpressure; XPS; passivation procedure; photoluminescence; surface electronic properties; thermal treatments; thin phosphide overlayer; Annealing; Atomic layer deposition; III-V semiconductor materials; Laser excitation; Oxidation; Page description languages; Photoluminescence; Surface cleaning; Surface treatment; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147440
