Title :
1.55 μm laser on (110) InP by GSMBE
Author :
Zamkotsian, F. ; Poingt, F. ; Le Gouezigou, L. ; Gaborit, F. ; Provost, J.-G. ; Artigue, C. ; Benoit, J.
Author_Institution :
Alcatel Alsthom Recherche, Marcoussis, France
Abstract :
The realization of standard heterojunction and multiple quantum well (MQW) 1.55-μm lasers in the GaInAsP system grown by gas source molecular beam epitaxy (GSMBE) on (110) InP is discussed. It is shown that high-performance transmitters suitable for the polarization scrambling scheme can be achieved by integrating, on the same substrate, lasers and efficient polarization modulators
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor junction lasers; (110) substrate; 1.55 micron; GaInAsP-InP; InP; MQW lasers; gas source molecular beam epitaxy; heterojunction lasers; high-performance transmitters; polarization modulators; polarization scrambling scheme; ridge lasers; Epitaxial layers; Indium phosphide; Laser excitation; Optical scattering; Photoluminescence; Quantum well devices; Substrates; Surface morphology; Temperature; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147444
