Title :
Significant improvement of electroabsorption saturation intensity by use of AlGaInAs as barriers for GaInAs multiple quantum wells
Author :
Chang, T.Y. ; Sauer, N.J. ; Wood, T.H. ; Pastalan, J.Z. ; Burrus, C.A. ; Johnson, B.C.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
It is shown that quaternary AlGaInAs is an excellent barrier material for long wavelength modulators using GaInAs quantum wells. Quaternary AlGaInAs has a lower trap density than ternary AlInAs. A low valence-band discontinuity results in saturation intensities at least a factor of 30 higher than those obtained with InP barriers. Decreasing the barrier thickness increases saturation intensities by an additional factor of five
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; optical modulation; semiconductor quantum wells; GaInAs-AlGaInAs; barrier material; electroabsorption saturation intensity; long wavelength modulators; multiple quantum wells; saturation intensities; trap density; valence-band discontinuity; Indium phosphide; Molecular beam epitaxial growth; Optical bistability; Optical devices; Optical materials; Optical modulation; Optical saturation; Photonic band gap; Quantum well devices; Thickness measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147445
