Impurity induced disordering of GaInAs quantum wells with barriers of AlGaInAs or of GaInAsP [MQW waveguides]

The use of fluorine and boron to disorder two material systems for use at 1.5 μm, GaInAs/AlGaInAs and GaInAs/GaInAsP, both lattice-matched to InP, is discussed. Three structures are investigated: two GaInAsP multiple quantum well (MQW) structures, a separate confinement heterostructure (SCH) and a graded index structure (GRIN), and an AlGaInAs MQW structure. It is shown that the P-quaternary disorders without any implants at annealing temperatures above 500°C, and the Al-quaternary is stable up to annealing temperatures of 650°C. At annealing temperatures of 600°C for the P and 650°C for the Al quaternary. boron causes some intermixing, probably due to the damage caused by implantation. A significant blue shift was achieved in material implanted with fluorine while, under the same annealing conditions, the control samples remained unchanged