Title :
Advanced growth/processing for quantum transistors
Author :
Furuya, Kazuhito ; Miyamoto, Yasuyuki
Author_Institution :
Dept. of Electr. & Electron, Eng., Tokyo Inst. of Technol., Japan
Abstract :
The control of electron transport by using the coherent interaction between the electron and artificially formed potential structure is discussed. The principle of the electron wave diffraction transistor is explained. Fabrication of GaInAs/InP nanometer grating for coherent electron devices is described. Extending the concept of the coherent interaction between the electron and the potential structure, the use of the coherent interaction between the electron and impurity ions placed in the semiconductor crystal according to a design is proposed
Keywords :
III-V semiconductors; electron beam lithography; etching; gallium arsenide; indium compounds; quantum interference devices; semiconductor growth; vapour phase epitaxial growth; GaInAs-InP nanometer grating; OMVPE; artificially formed potential structure; coherent electron devices; electron beam lithography; electron transport control; electron wave diffraction transistor; etching; impurity ions; quantum transistors; Chemicals; Diffraction gratings; Electron emission; Fabrication; Indium phosphide; Lithography; Nanoscale devices; Resists; Transistors; Wet etching;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147447
