DocumentCode :
3552460
Title :
RTA study of thermal stability and interdiffusion of InGaAs/InP quantum wells-the influence of InGaAs cap layers
Author :
Oshinowo, J. ; Forchel, A. ; Grützmacher, D. ; Stollenwerk, M.
Author_Institution :
Tech. Phys., Wurzburg Univ., Germany
fYear :
1991
fDate :
8-11 Apr 1991
Firstpage :
606
Lastpage :
609
Abstract :
A study of the thermal stability of InGaAs/InP quantum wells with different top barrier compositions that used rapid thermal annealing at temperatures between 600°C and 950°C (annealing time 1 min) is discussed. The thermal interdiffusion effects were evaluated by photoluminescence spectroscopy. From the temperature dependence of the luminescence energy shifts the interdiffusion coefficients and activation energies are determined
Keywords :
III-V semiconductors; annealing; chemical interdiffusion; gallium arsenide; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor quantum wells; 600 to 950 degC; III-V semiconductors; InGaAs-InP quantum wells; activation energies; cap layers; interdiffusion; luminescence energy shifts; photoluminescence spectroscopy; rapid thermal annealing; temperature dependence; thermal stability; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Optical device fabrication; Quantum well lasers; Rapid thermal annealing; Temperature; Thermal stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
Type :
conf
DOI :
10.1109/ICIPRM.1991.147449
Filename :
147449
Link To Document :
بازگشت