Title :
Ohmic contacts for GaAs devices
Author :
Cox, Ronaid H. ; Strack, Hans A. ; Cox, R.H. ; Strack, H.A.
Author_Institution :
Texas Instruments Inc., Dallas, Texas
Abstract :
Ohmic contacts were developed for GaAs devices, such as transistors and Gunn oscillators. Contacts had to meet the following requirements: 1) they must be ohmic to both low and high resistivity n-and p-type GaAs, 2) they must contact both
Keywords :
Conductivity; Diodes; Fabrication; Gallium arsenide; Gunn devices; Impurities; Ohmic contacts; Oscillators; Seals; Silicon;
Conference_Titel :
Electron Devices Meeting, 1966 International
DOI :
10.1109/IEDM.1966.187659
