• DocumentCode
    3552473
  • Title

    A silicon nitride junction seal on silicon planar transistors

  • Author

    Schneer, G.H. ; vanGelder, W. ; Hauser, V.E. ; Schmidt, P.F.

  • Volume
    12
  • fYear
    1966
  • fDate
    1966
  • Firstpage
    36
  • Lastpage
    38
  • Abstract
    This paper describes the fabrication, the electrical characteristics, and the aging behavior of silicon planar transistors with silicon nitride as a junction seal. The junction seal prevents device degradation due to sodium contamination.
  • Keywords
    Aging; Etching; Heat treatment; P-n junctions; Schottky barriers; Seals; Semiconductor films; Silicon; Switching circuits; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1966 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1966.187661
  • Filename
    1474500
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3552473