Title :
A silicon nitride junction seal on silicon planar transistors
Author :
Schneer, G.H. ; vanGelder, W. ; Hauser, V.E. ; Schmidt, P.F.
Abstract :
This paper describes the fabrication, the electrical characteristics, and the aging behavior of silicon planar transistors with silicon nitride as a junction seal. The junction seal prevents device degradation due to sodium contamination.
Keywords :
Aging; Etching; Heat treatment; P-n junctions; Schottky barriers; Seals; Semiconductor films; Silicon; Switching circuits; Voltage;
Conference_Titel :
Electron Devices Meeting, 1966 International
DOI :
10.1109/IEDM.1966.187661
