DocumentCode :
3552476
Title :
A doubly-tuned coupled resonant gate transistor
Author :
Nathanson, H.C. ; Davis, J.R. ; Newell, W.E.
Volume :
12
fYear :
1966
fDate :
1966
Firstpage :
40
Lastpage :
42
Abstract :
Singly resonant silicon tuning transistors have been reported. Multiresonant mechanical structures, properly constructed, can result in filters with flat passband and steep rejection slopes. We report a batch-fabricated twin cantilever RGT containing a coupling web near the clamped end. Under one beam is the electrostatic input electrode; under the other beam is the channel of the MOS detector. The beams can vibrate collectively in two modes. If the web width is adjusted properly, the two mode frequencies will be about fo/Q apart resulting in approximately flat doubly-tuned bandpass properties.
Keywords :
Bandwidth; Electrostatics; Frequency; Information filtering; Information filters; Laboratories; Optical coupling; Passband; Resonance; Structural beams;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1966 International
Type :
conf
DOI :
10.1109/IEDM.1966.187664
Filename :
1474503
Link To Document :
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