DocumentCode :
3552488
Title :
Microwave Si avalanche diodes with nearly-abrupt type junction
Author :
Misawa, T.
Author_Institution :
Bell Telephone Laboratories, Murray Hill, N.J.
Volume :
12
fYear :
1966
fDate :
1966
Firstpage :
50
Lastpage :
50
Abstract :
Oscillator performance of Si avalanche diodes which have junctions of nearly-abrupt type are discussed. The maximum output power so far obtained in CW operation is 1.1w at 12 GHz with an efficiency of 7.7%. There are indications that the noise performance of a typical diode is competitive with that of a hyperabrupt type diode reported by Josenhans.
Keywords :
Diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1966 International
Type :
conf
DOI :
10.1109/IEDM.1966.187675
Filename :
1474514
Link To Document :
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