DocumentCode :
3552498
Title :
A micron bit-size charge-storage device
Author :
MacDonald, N.C. ; Everhart, T.E.
Author_Institution :
University of California, Berkeley, Calif.
Volume :
12
fYear :
1966
fDate :
1966
Firstpage :
60
Lastpage :
60
Abstract :
The use of a scanning electron microscope to produce selective, stable, and reversible charge storage in the oxide layer of an MOS transistor is discussed. Electron beam switching of MOST structures from a conducting state to a nonconducting state is described. Electron bombardment of small areas of the gate electrode, typically 5 micrometers × 5 micrometers, allows storage of many bits of information on a single three-terminal MOST. The information can be read out in a nondestructive manner. By extension of the memory operation, it is possible to perform computer logic functions with a single MOST and a small diameter electron beam. Time constants associated with electron-beam charge storage are of the order of 30ms., while discharge time constants are typically 5ms. The relationship of the charge storage phenomena to the gate voltage during electron bombardment, the electron beam voltage and current, and the geometry of the MOST are discussed. A simple roodel for the charging phenomena is presented. The use of electron beam bombardment of MOST´s after fabrication to adjust the threshold voltage of different devices on a single wafer is described.
Keywords :
Electrodes; Electron beams; Image sensors; MOSFETs; Photoconducting materials; Scanning electron microscopy; Semiconductor diodes; Sensor systems; Thin film sensors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1966 International
Type :
conf
DOI :
10.1109/IEDM.1966.187684
Filename :
1474523
Link To Document :
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