Title :
A glass dielectric isolation technique
Author :
Price, W.L. ; Fordemwalt, J.N.
Abstract :
A new approach to dielectric isolation for integrated circuits utilizes a thick layer of a glass (approximately 25 microns) to replace the thin (approximately 1 micron) layer of silicon dioxide which is commonly used as the dielectric medium. This glass layer reduces the inter-device coupling capacitance, increases the dielectric breakdown voltage, and lessens the likelihood of inter-device shorting.
Keywords :
Capacitance; Coupling circuits; Crystallization; Dielectrics; Diffusion bonding; Gettering; Glass; Impurities; P-n junctions; Silicon compounds;
Conference_Titel :
Electron Devices Meeting, 1966 International
DOI :
10.1109/IEDM.1966.187693