Forward voltage distribution in p-n-p-n

The SCR conduction state has been analyzed in the literature both from a circuit and device parameter approach. Often where device design parameters were used, physical interpretation of parameters was lost through the use of analytic solutions. This paper presents the results of numerical calculations of voltage across the various regions of an SCR as a function of device parameters taking into account carrier-carrier scattering, conductivity modulation, and the dependence of emitter efficiency upon current density.