Title :
Photoluminescence lifetime measurements in InP wafers
Author :
Landis, Geoffrey A. ; Jenkins, Phillip ; Weinberg, Irving
Author_Institution :
Sverdrup Technol. Inc., Brook Park, OH, USA
Abstract :
An apparatus that measures the minority carrier lifetime in InP is described. The technique stimulates the sample with a short pulse of light from a diode laser and measures the photoluminescence (PL) decay to extract the minority carrier lifetime. The photoluminescence lifetime in InP as a function of doping on both n- and p-type material was examined. The results show a marked difference in the lifetime on n-type InP and p-type InP of similar doping levels. N-type InP shows a lifetime considerably longer than the expected radiative limited lifetime
Keywords :
III-V semiconductors; carrier lifetime; indium compounds; luminescence of inorganic solids; minority carriers; photoluminescence; III-V semiconductor; InP wafers; doping; minority carrier lifetime; n-type material; p-type material; photoluminescence lifetime; radiative limited lifetime; Charge carrier lifetime; Doping; Fiber lasers; Indium phosphide; NASA; Optical materials; Optical pulses; Photoluminescence; Photovoltaic cells; Space technology;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147455
