• DocumentCode
    3552537
  • Title

    MOVPE growth of In-containing compounds by new TMI supply system

  • Author

    Hidaka, Jun-ichi ; Yamaguchi, Akira ; Hirahara, Kazuhiro

  • Author_Institution
    Nippon Sanso Corp., Kawasaki, Japan
  • fYear
    1991
  • fDate
    8-11 Apr 1991
  • Firstpage
    640
  • Lastpage
    643
  • Abstract
    A system to supply trimethylindium (TMI) developed for low-pressure metalorganic vapor-phase epitaxy (MOVPE) growth of InGaAs and InP is described. Using the system, the stability in TMI supply was improved and fluctuation was minimized to ±0.4%. This makes fine control of a lattice constant possible. High-purity InP with a carrier concentration of 7.5×1014 cm-3 and mobility of 248000 cm-2/V-s at 77 K was successfully grown. The contamination from the system was extremely low
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; III-V semiconductors; InGaAs; InP; MOVPE growth; carrier concentration; carrier mobility; lattice constant control; low contamination; trimethylindium supply system; Contamination; Epitaxial growth; Epitaxial layers; Filters; Fluctuations; Indium gallium arsenide; Indium phosphide; Ovens; Solids; Stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1991., Third International Conference.
  • Conference_Location
    Cardiff
  • Print_ISBN
    0-87942-626-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1991.147456
  • Filename
    147456
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3552537